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Anodic oxidations: excellent process durability and surface passivation for high efficiency silicon solar cells

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Grant, NE, Kho, TC, Fong, KC, Franklin, E ORCID: 0000-0002-8146-2770, McIntosh, KR, Stocks, M, Wan, Y, Wang, EC, Zin, N, Murphy, JD and Blakers, A 2019 , 'Anodic oxidations: excellent process durability and surface passivation for high efficiency silicon solar cells' , Solar Energy Materials and Solar Cells, vol. 203 , pp. 1-8 , doi: 10.1016/j.solmat.2019.110155.

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Abstract

We investigate the versatility of anodically grown silicon dioxide (SiO2) films in the context of process durability and exceptional surface passivation for high efficiency (>23%) silicon solar cell architectures. We show that a room temperature anodic oxidation can achieve a thickness of ~70 nm within ~30 min, comparable to the growth rate of a thermal oxide at 1000 °C. We demonstrate that anodic SiO2 films can mask against wet chemical silicon etching and high temperature phosphorus diffusions, thereby permitting a low thermal budget method to form patterned structures. We investigate the saturation current density J0 of anodic SiO2/silicon nitride stacks on phosphorus diffused and undiffused silicon and show that a J0 of −2 can be achieved in both cases. Finally, to showcase the anodic SiO2 films on a device level, we employed the anodic SiO2/silicon nitride stack to passivate the rear surface of an interdigitated back contact solar cell, achieving an efficiency of 23.8%.

Item Type: Article
Authors/Creators:Grant, NE and Kho, TC and Fong, KC and Franklin, E and McIntosh, KR and Stocks, M and Wan, Y and Wang, EC and Zin, N and Murphy, JD and Blakers, A
Keywords: anodic oxidation, silicon, silicon dioxide, solar cell, surface passivation
Journal or Publication Title: Solar Energy Materials and Solar Cells
Publisher: Elsevier
ISSN: 0927-0248
DOI / ID Number: 10.1016/j.solmat.2019.110155
Copyright Information:

© 2019 The Authors. Published by Elsevier B.V. Licensed under Creative Commons Attribution 4.0 International (CC BY 4.0) http://creativecommons.org/licenses/by/4.0/

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